7.MOCT (Magneto-Optical Current Transformer):
Seminar Description: An accurate electric current transducer is a key component of any power system instrumentation. To measure currents power stations and substations conventionally employ inductive type current transformers with core and windings. For high voltage applications, porcelain insulators and oil-impregnated materials have to be used to produce insulation between the primary bus and the secondary windings. The insulation structure has to be designed carefully to avoid electric field stresses, which could eventually cause insulation breakdown. The electric current path of the primary bus has to be designed properly to minimize the mechanical forces on the primary conductors for through faults. The reliability of conventional high-voltage current transformers have been questioned because of their violent destructive failures which caused fires and impact damage to adjacent apparatus in the switchyards, electric damage to relays, and power service disruptions.
Seminar Description: An accurate electric current transducer is a key component of any power system instrumentation. To measure currents power stations and substations conventionally employ inductive type current transformers with core and windings. For high voltage applications, porcelain insulators and oil-impregnated materials have to be used to produce insulation between the primary bus and the secondary windings. The insulation structure has to be designed carefully to avoid electric field stresses, which could eventually cause insulation breakdown. The electric current path of the primary bus has to be designed properly to minimize the mechanical forces on the primary conductors for through faults. The reliability of conventional high-voltage current transformers have been questioned because of their violent destructive failures which caused fires and impact damage to adjacent apparatus in the switchyards, electric damage to relays, and power service disruptions.
8.MEMRISTERS:
Seminar Description:Memristor theory was formulated and named by Leon Chua in a 1971 paper. Chua strongly believed that a fourth device existed to provide conceptual symmetry with the resistor, inductor, and capacitor. This symmetry follows from the description of basic passive circuit elements as defined by a relation between two of the four fundamental circuit variables. A device linking charge and flux (themselves defined as time integrals of current and voltage), which would be the memristor, was still hypothetical at the time. However, it would not be until thirty-seven years later, on April 30, 2008, that a team at HP Labs led by the scientist R. Stanley Williams would announce the discovery of a switching memristor. Based on a thin film of titanium dioxide, it has been presented as an approximately ideal device.9.Micro Electro Mechanical Systems:
Seminar Description:"Micromechatronic is the synergistic integration of microelectromechanical systems, electronic technologies and precision mechatronics with high added value." This field is the study of small mechanical devices and systems .they range in size from a few microns to a few millimeters. This field is called by a wide variety of names in different parts of the world: micro electro mechanical systems (MEMS), micromechanics, Microsystems technology (MST), micro machines .this field which encompasses all aspects of science and technology, is involved with things one smaller scale. Creative people from all technical disciplines have important contributions to make. Welcome to the micro domain, a world now occupied by an explosive new technology known as MEMS (Micro Electro Mechanical systems), a World were gravity and inertia are no longer important, but the effects of atomic forces and surface science dominate.
10.FINFET:
Seminar Description:Since the fabrication of MOSFET, the minimum channel length has been shrinking continuously. The motivation behind this decrease has been an increasing interest in high speed devices and in very large scale integrated circuits. The sustained scaling of conventional bulk device requires innovations to circumvent the barriers of fundamental physics constraining the conventional MOSFET device structure. The limits most often cited are control of the density and location of dopants providing high I on /I off ratio and finite subthreshold slope and quantum-mechanical tunneling of carriers through thin gate from drain to source and from drain to body. The channel depletion width must scale with the channel length to contain the off-state leakage I off. This leads to high doping concentration, which degrade the carrier mobility and causes junction edge leakage due to tunneling. Furthermore, the dopant profile control, in terms of depth and steepness, becomes much more difficult. The gate oxide thickness tox must also scale with the channel length to maintain gate control, proper threshold voltage VT and performance. The thinning of the gate dielectric results in gate tunneling leakage, degrading the circuit performance, power and noise margin.
Posted in: Seminors
0 comments:
Post a Comment